| PART |
Description |
Maker |
| MMDF5N02Z |
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MMDF3P03HD ON2187 ON2186 |
DUAL TMOS POWER MOSFET 30 VOLTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
| MMDF3207 MMDF3207_D ON2174 |
From old datasheet system
Medium Power Surface Mount Products
DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
|
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTDF1N03HD ON2524 ON2523 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system
SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
|
| MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| ISL55110IRZ-T ISL55110-11 |
Dual, High Speed MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R 3.5 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp.
Intersil Corporation
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
